FET CH P / BVgs min @ IG = 30V@1uA, Idss(max)@Vds=2mA@25, Vp max @ Vds=4@-15, Forma: TO-92

MOSFET CH N / 60V / 84A / 200W / 0.012 ohms , Forma: TO-220AB

MOSFET CH N/ 60V / 12A / 48W / 0.089 ohms / Vgs 1.6V especial sistemas digitales, Forma: DPAK

MOSFET CH N/ 500V / 20A / 280W / 0.22 ohms, Forma: TO-247

MOSFET CH N/ 100V / 33A / 120W / 0.033 ohms, Forma: TO-220AB

MOSFET CH N/ 200V / 18A / 150W / 0.15 ohms, Forma: TO-220AB

MOSFET CH N/ 400V / 10A / 125W / 0.55 ohms, Forma: TO-220AB

MOSFET CH N/ 500V / 8.7A / 156W / 0.85 ohms, Forma: TO-220AB

MOSFET CH P/ -100V / -13A / 130W / 0.2 ohms, Forma: TO-220AB

MOSFET CH P/ -200V / -11A / 123W / 0.5 ohms, Forma: TO-220AB

MOSFET CH N/ 55V / 110A / 200W / 0.008 ohms, Forma: TO-220AB

MOSFET CH N/ 75V / 170A / 300W / 0.0033 ohms, Forma: TO-220AB

AUTOMOTIVE MOSFET CH N/ 75V / 140A / 330W / 0.007 ohms, Forma: TO-220AB

MOSFET CH N/ 100V / 180A / 370W / 0.0037 ohms, Forma: TO-220AB

Small Signal MOSFET 200 mAmps, 60 Volts, Forma: TO-92

MOSFET N-Channel Logic Level, Vdss 50V, Id 0.22A, Pd 0.36W, Vgs 1.3V, Rds 0.7 a 6 ohms, para montaje superficial (SMD), Forma: SOT-23

IGBT CH N/ 600V / 10A@100ºC / 20A@25ºC/65W / CON DIODO ANTIPARALELO ULTRARAPIDO, Forma: TO-220AB

IGBT CH N/ 600V / 40A / 160W / 40 KHZ / CON DIODO ANTIPARALELO ULTRARAPIDO, Forma: TO-247

IGBT CH N/ 600V / 40A / 160W / 150 KHZ HASTA 300KHZ/, Forma: TO-247AC

IGBT FS4 TRENCH, CH N/ 650V / 60A@100ºC / 120A@25ºC/ Pd 330W@25°C 167W@100°C / CON DIODO ANTIPARALELO ULTRARAPIDO, Forma: TO-247

TRANSISTOR PROGRAMABLE UNIJUNTURA (PUT) 40V, (ORIGINAL) Forma: TO-92

SCR GATE SENSIBLE 400V / 4A / Igt<200uA, Forma: TO-126

SCR GATE SENSIBLE 200V / 0.8A / 200uA Igt, Forma: TO-92

SCR 600V/8A, Forma: TO-220AB